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Magneto-transport flipping induced by surface oxidation in Co films

dc.citation.volume150en_US
dc.contributor.authorChung, T. Y.en_US
dc.contributor.authorHsu, S. Y.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:18:22Z
dc.date.available2014-12-08T15:18:22Z
dc.date.issued2009en_US
dc.description.abstractWe have performed low temperature magnetoresistance (MR) and magnetization measurements for a series of thin Co films with different degrees of oxidation to investigate the role of surface oxidation on magnetic properties. For films with less oxidation, magneto-transport exhibits the typical anisotropic magnetoresistance behavior. However, magneto-transport flips completely in films with severe oxidation. The inverse MR is replaced by the normal MR when the applied magnetic field is a long the current. The normal MR is changed to the inverse MR when the applied magnetic field is perpendicular to the current. Since the disorder will enhance the spin-orbital interaction and electron-electron interaction in thin films, we suggest that both mechanisms may be responsible for the flipping in anisotropic MR induced by surface oxidation.en_US
dc.identifier.doi10.1088/1742-6596/150/4/042063en_US
dc.identifier.issn1742-6588en_US
dc.identifier.journal25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4: QUANTUM PHASE TRANSITIONS AND MAGNETISMen_US
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/150/4/042063en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/13256
dc.identifier.wosnumberWOS:000289891200063
dc.language.isoen_USen_US
dc.titleMagneto-transport flipping induced by surface oxidation in Co filmsen_US
dc.typeArticleen_US

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