On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology
| dc.citation.epage | 233 | en_US |
| dc.citation.spage | 230 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Hsu, Heng-Tung | en_US |
| dc.contributor.author | Kuo, Chien-, I | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2017-04-21T06:48:56Z | |
| dc.date.available | 2017-04-21T06:48:56Z | |
| dc.date.issued | 2008 | en_US |
| dc.identifier.isbn | 978-1-4244-2641-6 | en_US |
| dc.identifier.journal | APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135075 | |
| dc.identifier.wosnumber | WOS:000274900900043 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology | en_US |
| dc.type | Proceedings Paper | en_US |
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