金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(III)
| dc.contributor.author | 荊鳳德 | en_US |
| dc.contributor.author | CHIN ALBERT | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:46:08Z | |
| dc.date.available | 2014-12-13T10:46:08Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC99-2120-M009-002 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=2149452&docId=346056 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100666 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 高介電係數 金屬閘極 等效氧化層厚度 場效電晶體 臨界電壓 | zh_TW |
| dc.subject | high-k dielectric | en_US |
| dc.subject | metal-gate | en_US |
| dc.subject | EOT | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | threshold voltage | en_US |
| dc.subject | Vt | en_US |
| dc.title | 金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(III) | zh_TW |
| dc.title | Metal-Gate/High-K Cmosfets for 45 to 22 Nm Technology Nodes (III) | en_US |
| dc.type | Plan | en_US |