Oscillations of magnetoconductance in semiconductor-superconductor junctions with a laterally potential barrier isolator inside semiconductor region
| dc.citation.epage | 326 | en_US |
| dc.citation.issue | 1-3 | en_US |
| dc.citation.spage | 325 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.contributor.author | Yang, TJ | en_US |
| dc.contributor.author | Hsue, YC | en_US |
| dc.contributor.author | Gu, BY | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:01Z | |
| dc.date.available | 2014-12-08T15:41:01Z | |
| dc.date.issued | 2003-05-01 | en_US |
| dc.description.abstract | Magnetoconductance (MC) injunctions of a superconductor and a semiconductor (Sm) consisting of two parallel quantum waveguides (QW) coupled through a potential barrier under a perpendicular applied magnetic field in the semiconductor region is studied theoretically. The results of MC showing a series of oscillations with stepwise platform and spikes may be understood well within the phenomenological argument similar to Y. Asano (Phys. Rev. B 61 (2000) 1732) proposed. The oscillatory peaks of the MC in the dual QW are found essentially due to the variation of the number of the propagation modes. (C) 2003 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S1386-9477(02)01068-8 | en_US |
| dc.identifier.issn | 1386-9477 | en_US |
| dc.identifier.journal | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S1386-9477(02)01068-8 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27944 | |
| dc.identifier.wosnumber | WOS:000183534200149 | |
| dc.language.iso | en_US | en_US |
| dc.subject | magnetoconductance | en_US |
| dc.subject | semiconductor-superconductor junction | en_US |
| dc.subject | quantum waveguide | en_US |
| dc.title | Oscillations of magnetoconductance in semiconductor-superconductor junctions with a laterally potential barrier isolator inside semiconductor region | en_US |
| dc.type | Article; Proceedings Paper | en_US |