Study the electrical properties of non-crystalline semiconductor by admittance spectroscopy
| dc.citation.epage | 611 | en_US |
| dc.citation.spage | 608 | en_US |
| dc.contributor.author | Hsieh, Ming-Ta | en_US |
| dc.contributor.author | Chang, Chan-Ching | en_US |
| dc.contributor.author | Chen, Jenn-Fang | en_US |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Yen, Kuo-Hsi | en_US |
| dc.contributor.author | Chen, Chih-Hsien | en_US |
| dc.contributor.author | Lee, Yeong-Shyang | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:09Z | |
| dc.date.available | 2014-12-08T15:12:09Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | We developed three types of equivalent circuit model to investigate the electrical properties of non-crystalline semiconductor. From the equivalent circuit models, parameters of non-crystalline semiconductor can be easily obtained by admittance spectroscopy. This method also can be utilized in the optimization of device process as well. | en_US |
| dc.identifier.isbn | 978-957-28522-4-8 | en_US |
| dc.identifier.journal | IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9323 | |
| dc.identifier.wosnumber | WOS:000258177700159 | |
| dc.language.iso | en_US | en_US |
| dc.title | Study the electrical properties of non-crystalline semiconductor by admittance spectroscopy | en_US |
| dc.type | Proceedings Paper | en_US |
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