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非有序材料的穿隧電子能階密度研究

dc.contributor.author許世英en_US
dc.contributor.authorSHIH-YINGHSUen_US
dc.contributor.department交通大學電子物理系zh_TW
dc.date.accessioned2014-12-13T10:37:08Z
dc.date.available2014-12-13T10:37:08Z
dc.date.issued1999en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC88-2112-M009-041zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=426127&docId=76087en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94416
dc.language.isozh_TWen_US
dc.subject非有序銅鍺合金zh_TW
dc.subject穿隧電子能階密度zh_TW
dc.subject電子-電子庫侖作用力zh_TW
dc.subject金屬-非金屬相變zh_TW
dc.subjectDisordered CuGe alloyen_US
dc.subjectTunneling density of stateen_US
dc.subjectElectron-electron interactionen_US
dc.subjectMetal-insulator transitionen_US
dc.title非有序材料的穿隧電子能階密度研究zh_TW
dc.titleStudies of the Tunneling Density of States in the Disordered Materialsen_US
dc.typePlanen_US

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