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Ka-Band pHEMT Quadrupler with Injection and Extraction from Oscillator Frequency Doubling Points

dc.citation.woscount0en_US
dc.contributor.authorChang, Wei-Lingen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorWu, Yan-Fengen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.date.accessioned2015-12-02T03:01:00Z
dc.date.available2015-12-02T03:01:00Z
dc.date.issued2014-01-01en_US
dc.description.abstractA Ka-band injection-locked quadrupler MMIC is demonstrated using 0.15-mu m pseudomorphic high electron mobility transistor (pHEMT) technology. pHEMT technology is suitable to the millimeter wave quadrupler by using the topology of high-order sub-harmonic injection lock based on a cross-coupled oscillator. Furthermore, thanks to the semi-insulating GaAs substrate, it is easy to implement microwave/millimeter wave passive components to achieve accurate balanced signals. As a result, the measured output power of the quadrupler is 8 dBm for frequency of 30 GHz and the locking bandwidth reaches 300 MHz.en_US
dc.identifier.isbn978-1-4799-3869-8en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.journal2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/128661
dc.identifier.wosnumberWOS:000363283700402en_US
dc.language.isoen_USen_US
dc.subjectSub-harmonicen_US
dc.subjectinjection-lockeden_US
dc.subjectvoltage controlled oscillatoren_US
dc.subjectMarchand balunen_US
dc.subjecthigh-electron mobility transistors (HEMTs)en_US
dc.subjectGaAsen_US
dc.titleKa-Band pHEMT Quadrupler with Injection and Extraction from Oscillator Frequency Doubling Pointsen_US
dc.typeProceedings Paperen_US

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