High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference
| dc.citation.epage | + | en_US |
| dc.citation.spage | 358 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Wu, C. H. | en_US |
| dc.contributor.author | Hung, B. F. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Wang, S. J. | en_US |
| dc.contributor.author | Chen, W. J. | en_US |
| dc.contributor.author | Wang, X. P. | en_US |
| dc.contributor.author | Li, M. -F. | en_US |
| dc.contributor.author | Zhu, C. | en_US |
| dc.contributor.author | Jin, Y. | en_US |
| dc.contributor.author | Tao, H. J. | en_US |
| dc.contributor.author | Chen, S. C. | en_US |
| dc.contributor.author | Liang, M. S. | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2017-04-21T06:48:24Z | |
| dc.date.available | 2017-04-21T06:48:24Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | We report novel 1000 degrees C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good phi(m.eff) of 5.08 and 4.24 eV, low V, of -0.10 and 0.18 V, high mobility of 84 and 217 cm(2)/Vs at 1.6 nm EOT, and small 850 degrees C BTI < 20 mV (10 MV/cm for 1 hr) are measured. | en_US |
| dc.identifier.isbn | 978-1-4244-0438-4 | en_US |
| dc.identifier.journal | 2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135214 | |
| dc.identifier.wosnumber | WOS:000247357700089 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference | en_US |
| dc.type | Proceedings Paper | en_US |
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