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奈米CMOS元件量子效應與電荷傳輸模擬及電性與可靠性分析(III)

dc.contributor.author汪大暉en_US
dc.contributor.authorWANG TAHUIen_US
dc.contributor.department交通大學電子工程系zh_TW
dc.date.accessioned2014-12-13T10:29:52Z
dc.date.available2014-12-13T10:29:52Z
dc.date.issued2006en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC95-2221-E009-271zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1309492&docId=241985en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/89738
dc.language.isozh_TWen_US
dc.title奈米CMOS元件量子效應與電荷傳輸模擬及電性與可靠性分析(III)zh_TW
dc.titleNano-CMOS Charge Ballistic Transport, Quantum Effect, Characterization, and Reliability Study(III)en_US
dc.typePlanen_US

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