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Analysis and prevention on NC-ball induced ESD damages in a 683-pin BGA packaged chipset IC

dc.citation.epage1588en_US
dc.citation.issue9-11en_US
dc.citation.spage1583en_US
dc.citation.volume43en_US
dc.contributor.authorLo, WYen_US
dc.contributor.authorKer, MDen_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.date.accessioned2014-12-08T15:40:26Z
dc.date.available2014-12-08T15:40:26Z
dc.date.issued2003-09-01en_US
dc.description.abstractAn abnormal failure mechanism due to ESD zapping on the Non-Connected (NC) balls of a 683-pin BGA packaged chipset IC is presented. Failure analyses, including Scanning Electronic Microscopy (SEM) photographs and the measurement of current waveforms during ESD zapping, had been performed with a new proposed equivalent circuit to give clear explanation on this unusual phenomenon. Several methods to prevent such failure mechanism are also discussed. (C) 2003 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/S0026-2714(03)00278-6en_US
dc.identifier.issn0026-2714en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0026-2714(03)00278-6en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27601
dc.identifier.wosnumberWOS:000185791500039
dc.language.isoen_USen_US
dc.titleAnalysis and prevention on NC-ball induced ESD damages in a 683-pin BGA packaged chipset ICen_US
dc.typeArticle; Proceedings Paperen_US

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