Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots
| dc.citation.epage | 136 | en_US |
| dc.citation.issue | 1-2 | en_US |
| dc.citation.spage | 131 | en_US |
| dc.citation.volume | 25 | en_US |
| dc.contributor.author | Shen, JX | en_US |
| dc.contributor.author | Oka, Y | en_US |
| dc.contributor.author | Cheng, HH | en_US |
| dc.contributor.author | Tsai, FY | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:47:07Z | |
| dc.date.available | 2014-12-08T15:47:07Z | |
| dc.date.issued | 1999-01-01 | en_US |
| dc.description.abstract | The exciton dynamics in Ga1-xInxAs/GaAs self-organized quantum dots grown on GaAs (1 1 1)B substrates are studied by the time-resolved photoluminescence (PL). We have found the intra-dot exciton relaxation by the reduction of the linewidth and peak energy and also by the energy-dependent PL rise time in the transient PL spectra. Compared with the energy relaxation in the reference quantum wells, we have confirmed that the exciton relaxation in three-dimensionally confined quantum dots is slower than in the quantum wells, (C) 1999 Academic Press. | en_US |
| dc.identifier.issn | 0749-6036 | en_US |
| dc.identifier.journal | SUPERLATTICES AND MICROSTRUCTURES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31615 | |
| dc.identifier.wosnumber | WOS:000078799200022 | |
| dc.language.iso | en_US | en_US |
| dc.subject | transient photoluminescence | en_US |
| dc.subject | self organized quantum dots | en_US |
| dc.subject | hot excitation relaxation | en_US |
| dc.title | Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots | en_US |
| dc.type | Article; Proceedings Paper | en_US |