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電晶體之製法

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201603143zh_TW
dc.contributor.author孟心飛en_US
dc.contributor.author冉曉雯en_US
dc.contributor.author趙宇強en_US
dc.contributor.author洪勝富en_US
dc.contributor.author陳兆軒en_US
dc.contributor.author鄭羽?en_US
dc.contributor.author張哲豪en_US
dc.date.accessioned2016-12-20T05:04:14Z
dc.date.available2016-12-20T05:04:14Z
dc.date.issued2016-01-16en_US
dc.description.abstract一種電晶體之製法,係先提供一基材與一承載件,該基材上形成有絕緣層,該絕緣層具有複數外露該基材之通道,且該絕緣層上形成有導體層,又該承載件之表面上形成有流體包覆材料;接著,將該基材設於該承載件上,使該導體層接觸該流體包覆材料,之後再移動該基材,使該基材遠離該承載件,以令該流體包覆材料擴散包覆該導體層,待該導體層完全離開該承載件上之流體包覆材料之表面後,使該導體層上之流體包覆材料作為包覆層,故藉由控制該流體包覆材料之濃度及該基材之上升速度,以決定該包覆層的成形範圍,因而可避免成膜厚度太薄之問題。zh_TW
dc.identifier.govdocH01L021/336zh_TW
dc.identifier.govdocH01L021/28zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/132241
dc.language.isozh_TWen_US
dc.title電晶體之製法zh_TW
dc.typePatentsen_US

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