Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20100040859 | zh_TW |
| dc.contributor.author | Chang, Chia-Hua | en_US |
| dc.contributor.author | Yang, Chin-Sheng | en_US |
| dc.contributor.author | Chiu, Ching-Hua | en_US |
| dc.contributor.author | Yu, Pei-Chen | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.date.accessioned | 2014-12-16T06:15:42Z | |
| dc.date.available | 2014-12-16T06:15:42Z | |
| dc.date.issued | 2010-02-18 | en_US |
| dc.description.abstract | The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties. | zh_TW |
| dc.identifier.govdoc | B32B003/26 | zh_TW |
| dc.identifier.govdoc | C23C014/30 | zh_TW |
| dc.identifier.govdoc | C23C014/34 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105443 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same | zh_TW |
| dc.type | Patents | en_US |