The CVD growth of Cu films using H-2 as carrier gas
| dc.citation.epage | 571 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 567 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.contributor.author | Lin, PJ | en_US |
| dc.contributor.author | Chen, MC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:38Z | |
| dc.date.available | 2014-12-08T15:46:38Z | |
| dc.date.issued | 1999-05-01 | en_US |
| dc.description.abstract | Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethyl-vinylsilane (Cu(hfac)TMVS) was studied using a low pressure chemical vapor deposition system of a cold wall vertical reactor. The Cu films deposited using H-2 as a carrier gas revealed no impurities in the films within the detection limits of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Using hydrogen as a carrier gas, the hydrogen not only acts as a reducing agent, but also reacts with the residual fragment of precursor. As a result, using H-2 as a carrier gas for Cu(hfac)TMVS resulted in Cu films of lower resistivity, denser microstructure and faster deposition rate than using Ar or N-2 as the carrier gas. Moreover, we found that N-2 plasma treatment on the substrate surface prior to Cu deposition increased the deposition rate of Cu films. | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31360 | |
| dc.identifier.wosnumber | WOS:000080269700029 | |
| dc.language.iso | en_US | en_US |
| dc.subject | chemical vapor deposition (CVD) | en_US |
| dc.subject | Cu films | en_US |
| dc.subject | H-2 as carrier gas | en_US |
| dc.subject | resistivity | en_US |
| dc.title | The CVD growth of Cu films using H-2 as carrier gas | en_US |
| dc.type | Article; Proceedings Paper | en_US |