Stretching-Assembled Nanowires for Organic-Based Thin Film Transistors

dc.citation.epage	1492	en_US
dc.citation.spage	1491	en_US
dc.citation.volume	19	en_US
dc.contributor.author	Hsieh, Gen-Wen	en_US
dc.contributor.author	Ogata, Ken	en_US
dc.contributor.author	Cheng, Kuang-Yao	en_US
dc.contributor.author	Wu, Jia-Yuan	en_US
dc.contributor.author	Milne, William I.	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.date.accessioned	2018-08-21T05:56:40Z
dc.date.available	2018-08-21T05:56:40Z
dc.date.issued	2012-01-01	en_US
dc.description.abstract	We demonstrate a stretched contact-printing technique to assemble one-dimensional nanostructures with controlled density and orientation. Over 90% nanowires are highly aligned along the primary stretching direction. Specifically, The hybrid inorganic-organic TFTs based on a parallel-aligned nanowire network and a semiconducting polymer reveal a significant positive enhancement in transistor performance and air-stability.	en_US
dc.identifier.issn	1883-2490	en_US
dc.identifier.journal	IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/146490
dc.identifier.wosnumber	WOS:000399355100172	en_US
dc.language.iso	en_US	en_US
dc.subject	stretched contact-printing	en_US
dc.subject	nanowires	en_US
dc.subject	hybrid TFTs	en_US
dc.title	Stretching-Assembled Nanowires for Organic-Based Thin Film Transistors	en_US
dc.type	Proceedings Paper	en_US

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