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Fabrication and characterization of poly-Si nanowire devices with performance enhancement techniques

dc.citation.epage121en_US
dc.citation.spage120en_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorLin, Homg-Chihen_US
dc.contributor.authorTsai, Hsien-Hungen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.contributor.authorNi, Wei-Xinen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:16:46Z
dc.date.available2014-12-08T15:16:46Z
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0584-8en_US
dc.identifier.journal2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papersen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12334
dc.identifier.wosnumberWOS:000247059300053
dc.language.isoen_USen_US
dc.titleFabrication and characterization of poly-Si nanowire devices with performance enhancement techniquesen_US
dc.typeProceedings Paperen_US

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