A tunable and program-erasable capacitor on Si with excellent tuning memory
| dc.citation.epage | 262 | en_US |
| dc.citation.spage | 259 | en_US |
| dc.contributor.author | Lai, CH | en_US |
| dc.contributor.author | Lee, CF | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Zhu, C | en_US |
| dc.contributor.author | Li, MF | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.author | Kwong, DL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:47Z | |
| dc.date.available | 2014-12-08T15:25:47Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.abstract | A novel tunable and program-erasable high-kappa: AIN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always connected voltage bias circuit. Large C-max /C-min tunability of 12 is obtained due to the high-kappa AIN dielectric with high 5 muF/mum(2) capacitance density. Good tuning memory is evidenced from the small V-th variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time. | en_US |
| dc.identifier.doi | 10.1109/RFIC.2004.1320589 | en_US |
| dc.identifier.isbn | 0-7803-8333-8 | en_US |
| dc.identifier.issn | 1529-2517 | en_US |
| dc.identifier.journal | 2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/RFIC.2004.1320589 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18223 | |
| dc.identifier.wosnumber | WOS:000222534600058 | |
| dc.language.iso | en_US | en_US |
| dc.title | A tunable and program-erasable capacitor on Si with excellent tuning memory | en_US |
| dc.type | Proceedings Paper | en_US |