單電荷與輻射效應在先進CMOS 和SONOS 元件可靠性之統計量測與模式

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dc.contributor.author汪大暉en_US
dc.contributor.authorWANG TAHUIen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2014-12-13T10:28:34Z
dc.date.available2014-12-13T10:28:34Z
dc.date.issued2013en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC102-2221-E009-173-MY3zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=3086423&docId=415027en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/88422
dc.language.isozh_TWen_US
dc.title單電荷與輻射效應在先進CMOS 和SONOS 元件可靠性之統計量測與模式zh_TW
dc.titleStatistical Models and Characterization of Single Charge Phenomena and Irradiation Effects in Advanced CMOS and SONOS Devicesen_US
dc.typePlanen_US

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