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4-GHz low-phase-noise transformer-based top-series GaInP/GaAs HBT QVCO

dc.citation.epage1812en_US
dc.citation.spage1809en_US
dc.contributor.authorMeng, C. C.en_US
dc.contributor.authorTseng, S. C.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorSu, J. Y.en_US
dc.contributor.authorHuang, G. W.en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:24:55Z
dc.date.available2014-12-08T15:24:55Z
dc.date.issued2006en_US
dc.description.abstractThe fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The quadrature VCO at 4.1 GHz has phase noise of -120 dBc/Hz at 1MHz offset frequency, output power of 2 dBm and the figure of merit (FOM) -178 dBc/Hz.en_US
dc.identifier.doi10.1109/MWSYM.2006.249746en_US
dc.identifier.isbn978-0-7803-9541-1en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.journal2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5en_US
dc.identifier.urihttp://dx.doi.org/10.1109/MWSYM.2006.249746en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17298
dc.identifier.wosnumberWOS:000244379004036
dc.language.isoen_USen_US
dc.subjectGaInP/GaAs heterojunction bipolar transistor (HBT)en_US
dc.subjecttop-series couplingen_US
dc.subjectquadrature voltage controlled oscillator (QVCO)en_US
dc.subjecttransformeren_US
dc.subjectphase noiseen_US
dc.title4-GHz low-phase-noise transformer-based top-series GaInP/GaAs HBT QVCOen_US
dc.typeProceedings Paperen_US

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