The Fabrication and The Characteristics of Metal-Oxide-Semiconductor Transistors
| dc.citation.epage | 86 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 78 | en_US |
| dc.citation.volume | 2 | en_US |
| dc.contributor.author | 郭雙發 | zh_TW |
| dc.contributor.author | 張俊彥 | zh_TW |
| dc.contributor.author | 陳福全 | zh_TW |
| dc.contributor.author | S.F.Guo | en_US |
| dc.contributor.author | C.Y.Chang | en_US |
| dc.contributor.author | F.C.Chen | en_US |
| dc.date.accessioned | 2017-10-06T06:17:34Z | |
| dc.date.available | 2017-10-06T06:17:34Z | |
| dc.date.issued | 1967-04 | en_US |
| dc.description.abstract | The theory of MOS transistors is introduced in brief and the design and the fabrication of MOS transistors are disgussed in detail. The experimental MOS transistor characteristics show the effects of the surface states and can be determined by the gate capacitance versus gate voltage characteristics by a spacially designed automatic curve tracer. | en_US |
| dc.identifier.journal | 交大學刊 | zh_TW |
| dc.identifier.journal | SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137432 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | The Fabrication and The Characteristics of Metal-Oxide-Semiconductor Transistors | en_US |
| dc.type | Campus Publications | en_US |