METAL-GATE/HIGH-k/GE MOSFET WITH LASER ANNEALING AND FABRICATION METHOD THEREOF
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20130032898 | zh_TW |
| dc.contributor.author | CHIN ALBERT | en_US |
| dc.date.accessioned | 2014-12-16T06:15:01Z | |
| dc.date.available | 2014-12-16T06:15:01Z | |
| dc.date.issued | 2013-02-07 | en_US |
| dc.description.abstract | The present invention discloses a metal-gate/high-κ/Ge MOSFET with laser annealing and a fabrication method thereof. The fabrication method comprises the following steps: forming a substrate; implanting a source area and a drain area on the substrate; activating the source area and the drain area by first laser light; depositing gate dielectric material on the substrate; annealing high-κ dielectric material by second laser light; and forming a metal gate on the high-κ dielectric material. | zh_TW |
| dc.identifier.govdoc | H01L029/78 | zh_TW |
| dc.identifier.govdoc | H01L021/336 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105080 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | METAL-GATE/HIGH-k/GE MOSFET WITH LASER ANNEALING AND FABRICATION METHOD THEREOF | zh_TW |
| dc.type | Patents | en_US |