METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20150004435 | zh_TW |
| dc.contributor.author | CHANG Li | en_US |
| dc.contributor.author | HO Yen-Teng | en_US |
| dc.date.accessioned | 2015-05-12T02:59:53Z | |
| dc.date.available | 2015-05-12T02:59:53Z | |
| dc.date.issued | 2015-01-01 | en_US |
| dc.description.abstract | The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method. | zh_TW |
| dc.identifier.govdoc | C30B023/02 | zh_TW |
| dc.identifier.govdoc | C30B025/18 | zh_TW |
| dc.identifier.govdoc | C30B029/40 | zh_TW |
| dc.identifier.govdoc | C30B023/06 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/122876 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES | zh_TW |
| dc.type | Patents | en_US |