High Efficiency InGaP/GaAs Solar Cell with Sub-wavelength Structure on AlInP Window Layer

dc.citation.epage	782	en_US
dc.citation.spage	781	en_US
dc.contributor.author	Tsai, Min-An	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Chiu, C. H.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:31:56Z
dc.date.available	2014-12-08T15:31:56Z
dc.date.issued	2010	en_US
dc.description.abstract	In this study, InGaP/GaAs solar cells fabricated by a Sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the Sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the Sub-wavelength structure by the RCWA was demonstrated that absorption of the solar cell will increase by the Sub-wavelength surface texture.	en_US
dc.identifier.isbn	978-1-4244-3543-2	en_US
dc.identifier.journal	INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/22562
dc.identifier.wosnumber	WOS:000282026500394
dc.language.iso	en_US	en_US
dc.title	High Efficiency InGaP/GaAs Solar Cell with Sub-wavelength Structure on AlInP Window Layer	en_US
dc.type	Article	en_US

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