High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser

dc.citation.epage	98	en_US
dc.citation.spage	97	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Chang, YH	en_US
dc.contributor.author	Lai, FI	en_US
dc.contributor.author	Lee, PT	en_US
dc.contributor.author	Wang, SC	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:25:55Z
dc.date.available	2014-12-08T15:25:55Z
dc.date.issued	2004	en_US
dc.description.abstract	High performance 1.27 mum InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than similar to30% when the temperature raised from room temperature to 70degreesC. High modulation bandwidth of 10.1 (8.8) GHz at 25degreesC (70degreesC) and bias current 6 mA are demonstrated.	en_US
dc.identifier.isbn	0-7803-8627-2	en_US
dc.identifier.journal	2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/18370
dc.identifier.wosnumber	WOS:000224835600047
dc.language.iso	en_US	en_US
dc.title	High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser	en_US
dc.type	Proceedings Paper	en_US

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