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EFFECT OF THE MIXED N-2/O-2 OXIDATION PROCESS ON IMPROVEMENT OF THE SENSITIVITY OF THE SIGE NANO-WIRE

dc.citation.epage154en_US
dc.citation.spage145en_US
dc.citation.volume35en_US
dc.citation.woscount0en_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Chu-Fengen_US
dc.contributor.authorLai, Chiung-Huien_US
dc.contributor.authorWang, Yu-Binen_US
dc.contributor.authorLiu, Chung-Hsienen_US
dc.contributor.authorHsieh, Cheng-Tingen_US
dc.contributor.authorWu, Chin-Ningen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2019-04-02T06:04:34Z
dc.date.available2019-04-02T06:04:34Z
dc.date.issued2011-01-01en_US
dc.description.abstractGe condensation has been reported to improve the hole mobility of the SiGe-on-insulator (SGOI). Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire exhibits higher sensitivity. In this work, we investigated the effect of different oxidation recipe to provide information on the sensitivity of SiGe nano-wire. The 3-amino-propyltrime-thoxy-silane (APTMS) is used to modify the nano-wire's surface potential. Induced sensitivity characteristics of the samples were preformed to estimate the improvement effect. The mixed N-2/O-2 oxidation process with optimization ratio can be an effective technology to improve the sensitivity of SGOI nano-wires.en_US
dc.identifier.doi10.1149/1.3653933en_US
dc.identifier.issn1938-5862en_US
dc.identifier.journalSENSORS, ACTUATORS, AND MICROSYSTEMS (GENERAL) - 219TH ECS MEETINGen_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3653933en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/150553
dc.identifier.wosnumberWOS:000300930300016en_US
dc.language.isoen_USen_US
dc.titleEFFECT OF THE MIXED N-2/O-2 OXIDATION PROCESS ON IMPROVEMENT OF THE SENSITIVITY OF THE SIGE NANO-WIREen_US
dc.typeProceedings Paperen_US

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