The post-annealing effect on the electrical properties of pentacene thin film transistors

dc.citation.epage	712	en_US
dc.citation.spage	709	en_US
dc.contributor.author	Shih, Yin-Ting	en_US
dc.contributor.author	Chen, Fang-Chung	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:12:15Z
dc.date.available	2014-12-08T15:12:15Z
dc.date.issued	2007	en_US
dc.description.abstract	In this study, the effect of post-annealing on the device performance is investigated systematically. X-ray diffraction pattern and images of atomic force microscopy reveal that the pentacene grain grows larger and the grain boundaries reduces after thermal annealing, resulting in the enhancement of device performance and stability.	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/9412
dc.identifier.wosnumber	WOS:000258177700190
dc.language.iso	en_US	en_US
dc.title	The post-annealing effect on the electrical properties of pentacene thin film transistors	en_US
dc.type	Proceedings Paper	en_US

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