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Transient-to-Digital Converter for Protection Design in CMOS Integrated Circuits against Electrical Fast Transient

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dc.citation.epage44en_US
dc.citation.spage41en_US
dc.contributor.authorYen, Cheng-Chengen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorLiao, Chi-Shengen_US
dc.contributor.authorChen, Tung-Yangen_US
dc.contributor.authorTsai, Chih-Chungen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:22:57Z
dc.date.available2014-12-08T15:22:57Z
dc.date.issued2009en_US
dc.description.abstractAn on-chip transient-to-digital converter for protection design against electrical fast transient (EFT) is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients under EFT tests. The output digital codes can correspond to different EFT voltages during the EFT-induced transient disturbances. The experimental results in a 0.18-mu m CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.en_US
dc.identifier.isbn978-1-4244-4285-0en_US
dc.identifier.journalEMC 2009: IEEE INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY, TECHNICAL PAPERen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/16182
dc.identifier.wosnumberWOS:000277119400008
dc.language.isoen_USen_US
dc.subjectconverteren_US
dc.subjectelectrical fast transient (EFT) testen_US
dc.subjecttransient detection circuiten_US
dc.titleTransient-to-Digital Converter for Protection Design in CMOS Integrated Circuits against Electrical Fast Transienten_US
dc.typeProceedings Paperen_US

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