超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---子計畫III：超高真空化學氣相沈積新穎複晶矽薄膜電晶體之低溫閘極介電層與新結構之研究

dc.contributor.author	張俊彥	en_US
dc.contributor.author	CHANG CHUN-YEN	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
dc.date.accessioned	2014-12-13T10:36:37Z
dc.date.available	2014-12-13T10:36:37Z
dc.date.issued	1999	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC88-2215-E009-048	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=428968&docId=76775	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/94061
dc.language.iso	zh_TW	en_US
dc.subject	超高真空化學氣相沈積法	zh_TW
dc.subject	複晶矽	zh_TW
dc.subject	薄膜電晶體	zh_TW
dc.subject	可靠度	zh_TW
dc.subject	低溫	zh_TW
dc.subject	鈍化	zh_TW
dc.subject	退火	zh_TW
dc.subject	液晶顯示器	zh_TW
dc.subject	UHVCVD	en_US
dc.subject	Polysilicon	en_US
dc.subject	Thin film transistor (TFT)	en_US
dc.subject	Reliability	en_US
dc.subject	Low temperature	en_US
dc.subject	Passivation	en_US
dc.subject	Annealing	en_US
dc.subject	LCD	en_US
dc.title	超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---子計畫III：超高真空化學氣相沈積新穎複晶矽薄膜電晶體之低溫閘極介電層與新結構之研究	zh_TW
dc.title	Study of UHVCVD Deposited Poly-Si TFTs with Low Temperature Gate Dielectric and Novel Structure	en_US
dc.type	Plan	en_US

Files

Now showing 1 - 1 of 1