High-density MIM capacitors with HfO(2) dielectrics
| dc.citation.epage | 349 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 345 | en_US |
| dc.citation.volume | 469 | en_US |
| dc.contributor.author | Perng, TH | en_US |
| dc.contributor.author | Chien, CH | en_US |
| dc.contributor.author | Chen, CW | en_US |
| dc.contributor.author | Lehnen, P | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:09Z | |
| dc.date.available | 2014-12-08T15:37:09Z | |
| dc.date.issued | 2004-12-22 | en_US |
| dc.description.abstract | Metal-insulator-metal (MIM) capacitors with high-k HfO(2) dielectrics were fabricated and investigated. Experimental results show low leakage current densities of similar to5 x 10(-9) A/cm(2) and high capacitance density of similar to3.4 fF/mum(2) at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO(2) MIM capacitors to be Poole-Frenkel-type conduction mechanism. (C) 2004 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.tsf.2004.08.148 | en_US |
| dc.identifier.issn | 0040-6090 | en_US |
| dc.identifier.journal | THIN SOLID FILMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2004.08.148 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25540 | |
| dc.identifier.wosnumber | WOS:000225724300058 | |
| dc.language.iso | en_US | en_US |
| dc.subject | MIM capacitors | en_US |
| dc.subject | HfO(2) | en_US |
| dc.subject | dielectrics | en_US |
| dc.title | High-density MIM capacitors with HfO(2) dielectrics | en_US |
| dc.type | Article; Proceedings Paper | en_US |