Development of stable micro-crystalline silicon AMLCD

dc.citation.spage	1921	en_US
dc.contributor.author	Chang, Chan-Ching	en_US
dc.contributor.author	Chen, Chih-Hsien	en_US
dc.contributor.author	Peng, Ya-Hui	en_US
dc.contributor.author	Lee, Yeong-Shyang	en_US
dc.contributor.author	Hou, Chih-Yuan	en_US
dc.contributor.author	Huang, Kun-Fu	en_US
dc.contributor.author	Shih, Houg-Tao	en_US
dc.contributor.author	Tseng, Fan-Shin	en_US
dc.contributor.author	Hsieh, Ming-Ta	en_US
dc.contributor.author	Chen, Jenn-Fang	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.date.accessioned	2018-08-21T05:57:03Z
dc.date.available	2018-08-21T05:57:03Z
dc.date.issued	2007-01-01	en_US
dc.description.abstract	Bottom-gate microcrystalline silicon thin film transistors (mu c-Si TFTs) have been produced by the radio frequency glow discharge technique using three different plasma treatment on the interface between microcrystalline and SiN layers. Our first microcrystalline silicon TFTs have better stability at high temperature stress.	en_US
dc.identifier.journal	IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/146977
dc.identifier.wosnumber	WOS:000258483900498	en_US
dc.language.iso	en_US	en_US
dc.title	Development of stable micro-crystalline silicon AMLCD	en_US
dc.type	Proceedings Paper	en_US

Files

Now showing 1 - 1 of 1