Analysis of pentacene thin film transistors in different atmospheres

dc.citation.epage	522	en_US
dc.citation.spage	520	en_US
dc.contributor.author	Wang, Yu-Wu	en_US
dc.contributor.author	Cheng, Horng-Long	en_US
dc.contributor.author	Wang, Yi-Kai	en_US
dc.contributor.author	Hu, Tang-Hsiang	en_US
dc.contributor.author	Ho, Jia-Chong	en_US
dc.contributor.author	Lee, Cheng-Chung	en_US
dc.contributor.author	Lei, Tan-Fu	en_US
dc.contributor.author	Yeh, Ching-Fa	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:25:30Z
dc.date.available	2014-12-08T15:25:30Z
dc.date.issued	2005	en_US
dc.description.abstract	This investigation addresses the electrical properties of pentacene-based thin film transistors in air, dry air and high vacuum. A potential barrier model was applied to explain the gate dependent field effect mobility behavior. The results show the trap density in air higher than that in a vacuum.	en_US
dc.identifier.isbn	978-957-28522-2-4	en_US
dc.identifier.journal	IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17907
dc.identifier.wosnumber	WOS:000259399200143
dc.language.iso	en_US	en_US
dc.title	Analysis of pentacene thin film transistors in different atmospheres	en_US
dc.type	Proceedings Paper	en_US

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