Polariton Lasing in a ZnO-based Microcavity up to 353K
| dc.citation.epage | 144 | en_US |
| dc.citation.spage | 143 | en_US |
| dc.contributor.author | Lai, Ying-Yu | en_US |
| dc.contributor.author | Lan, Yu-Pin | en_US |
| dc.contributor.author | Huang, Si-Wei | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:07Z | |
| dc.date.available | 2014-12-08T15:30:07Z | |
| dc.date.issued | 2012 | en_US |
| dc.description.abstract | We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature. | en_US |
| dc.identifier.isbn | 978-1-4577-0828-2 | en_US |
| dc.identifier.issn | 2326-5442 | en_US |
| dc.identifier.journal | 2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21590 | |
| dc.identifier.wosnumber | WOS:000316820100072 | |
| dc.language.iso | en_US | en_US |
| dc.title | Polariton Lasing in a ZnO-based Microcavity up to 353K | en_US |
| dc.type | Proceedings Paper | en_US |
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