Silicon-on-Insulator (SOI) based Polarization-Exchanger using Asymmetric Directional Coupler
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Peng, Ching-Wei | en_US |
| dc.contributor.author | Chang, Yuan-Chia | en_US |
| dc.contributor.author | Cheng, Ming-Wei | en_US |
| dc.contributor.author | Hsu, Yung | en_US |
| dc.contributor.author | Wei, Liang-Yu | en_US |
| dc.contributor.author | Chow, Chi-Wai | en_US |
| dc.contributor.author | Yeh, Chien-Hung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2019-09-02T07:45:42Z | |
| dc.date.available | 2019-09-02T07:45:42Z | |
| dc.date.issued | 2018-01-01 | en_US |
| dc.description.abstract | We propose an silicon-on-insulator (SOI) based polarization-exchanger using bi-level-tapers and asymmetric-directional-couplers. Signal from transverse-electric (TE) polarization can be switched to transverse-magnetic (TM) polarization and vice versa. Crosstalk <= -25dB is observed in 40nm wavelength window. | en_US |
| dc.identifier.isbn | 978-1-5386-9145-8 | en_US |
| dc.identifier.issn | 2166-8884 | en_US |
| dc.identifier.journal | 23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/152571 | |
| dc.identifier.wosnumber | WOS:000477695500210 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Silicon-on-Insulator (SOI) based Polarization-Exchanger using Asymmetric Directional Coupler | en_US |
| dc.type | Proceedings Paper | en_US |
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