"S-shaped" Photoluminescence Emission Shift in Cu(In,Ga)Se-2 Thin Films
| dc.contributor.author | Liao, Y. K. | en_US |
| dc.contributor.author | Kuo, S. Y. | en_US |
| dc.contributor.author | Lai, F. I. | en_US |
| dc.contributor.author | Lin, W. T. | en_US |
| dc.contributor.author | Hsieh, D. H. | en_US |
| dc.contributor.author | Chiu, D. W. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:31:51Z | |
| dc.date.available | 2014-12-08T15:31:51Z | |
| dc.date.issued | 2012 | en_US |
| dc.description.abstract | We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se-2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition. | en_US |
| dc.identifier.isbn | 978-1-4673-6274-0 | en_US |
| dc.identifier.issn | 2162-108X | en_US |
| dc.identifier.journal | 2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22500 | |
| dc.identifier.wosnumber | WOS:000322085900129 | |
| dc.language.iso | en_US | en_US |
| dc.title | "S-shaped" Photoluminescence Emission Shift in Cu(In,Ga)Se-2 Thin Films | en_US |
| dc.type | Proceedings Paper | en_US |
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