應用在Ku波段之氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.department | 交通大學材料科學與工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:34:28Z | |
| dc.date.available | 2014-12-13T10:34:28Z | |
| dc.date.issued | 2002 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC91-2215-E009-036 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=784374&docId=150762 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/92767 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 應用在Ku波段之氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析 | zh_TW |
| dc.title | High Power Electronic Devices Fabrication and High Frequency Characterization of Gallium Nitride Based Compound Semiconductors for Ku Band | en_US |
| dc.type | Plan | en_US |