Memory effect of sol-gel derived V-doped SrZrO3 thin films
| dc.citation.epage | 290 | en_US |
| dc.citation.issue | 1-2 | en_US |
| dc.citation.spage | 287 | en_US |
| dc.citation.volume | 494 | en_US |
| dc.contributor.author | Liu, CY | en_US |
| dc.contributor.author | Chuang, CC | en_US |
| dc.contributor.author | Chen, JS | en_US |
| dc.contributor.author | Wang, A | en_US |
| dc.contributor.author | Jang, WY | en_US |
| dc.contributor.author | Young, JC | en_US |
| dc.contributor.author | Chiu, KY | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:17:34Z | |
| dc.date.available | 2014-12-08T15:17:34Z | |
| dc.date.issued | 2006-01-03 | en_US |
| dc.description.abstract | V-doped SrZrO3 (SZO) thin films on LaNiO3/SiO2/Si substrate are synthesized by sol-gel method to form metal-insulator-metal (MIM) sandwich structure. The physical and electrical properties of the MIM device are studied. The structure and surface morphology of the SZO films are also characterized by X-ray diffraction and scanning electron microscopy. Such a device has the bistable switching properties of current-voltage characteristics. The resistive switching between high state and low state can also be operated with voltage pulses. The device with the properties of long retention time and non-destructive readout is expected to be suitable for nonvolatile memory application. (c) 2005 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.tsf.2005.08.153 | en_US |
| dc.identifier.issn | 0040-6090 | en_US |
| dc.identifier.journal | THIN SOLID FILMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2005.08.153 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12748 | |
| dc.identifier.wosnumber | WOS:000233785600053 | |
| dc.language.iso | en_US | en_US |
| dc.subject | SrZrO3 | en_US |
| dc.subject | memory effect | en_US |
| dc.subject | nonvolatile memory | en_US |
| dc.subject | RRAM | en_US |
| dc.title | Memory effect of sol-gel derived V-doped SrZrO3 thin films | en_US |
| dc.type | Article; Proceedings Paper | en_US |