薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | Chung Steve S | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:00Z | |
| dc.date.available | 2014-12-13T10:37:00Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-041 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=418054&docId=74156 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94333 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 熱載子 | zh_TW |
| dc.subject | 可靠度 | zh_TW |
| dc.subject | 氧化層 | zh_TW |
| dc.subject | 金氧半場效電晶體 | zh_TW |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | 洩漏電流 | zh_TW |
| dc.subject | Hot carrier | en_US |
| dc.subject | Reliability | en_US |
| dc.subject | Oxided larger | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | Deep submicrometer | en_US |
| dc.subject | Leakage current | en_US |
| dc.title | 薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析 | zh_TW |
| dc.title | Analysis of Hot Carrier Reliability for Thin Gate Oxide Deep-Submicron nMOSFET's | en_US |
| dc.type | Plan | en_US |