Leakage current cut-off device for ternary content addressable memory
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 07738275 | zh_TW |
| dc.contributor.author | Huang | en_US |
| dc.contributor.author | Po-Tsang | en_US |
| dc.contributor.author | Liu | en_US |
| dc.contributor.author | Wen-Yen | en_US |
| dc.contributor.author | Hwang | en_US |
| dc.contributor.author | Wei | en_US |
| dc.date.accessioned | 2014-12-16T06:14:24Z | |
| dc.date.available | 2014-12-16T06:14:24Z | |
| dc.date.issued | 2010-06-15 | en_US |
| dc.description.abstract | A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode. | zh_TW |
| dc.identifier.govdoc | G11C015/00 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104713 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Leakage current cut-off device for ternary content addressable memory | zh_TW |
| dc.type | Patents | en_US |