SELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVD

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dc.citation.epageC105en_US
dc.citation.issue3en_US
dc.citation.spageC105en_US
dc.citation.volume133en_US
dc.citation.woscount0
dc.contributor.authorHSIEH, TPen_US
dc.contributor.authorLEE, CLen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:12Z
dc.date.available2014-12-08T15:06:12Z
dc.date.issued1986-03-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4765
dc.identifier.wosnumberWOS:A1986A435800251
dc.language.isoen_USen_US
dc.titleSELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVDen_US
dc.typeMeeting Abstracten_US

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