Fully-depleted SOI MOSFET device and process for fabricating the same
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20060255405 | zh_TW |
| dc.contributor.author | Tsui, Bing-Yue | en_US |
| dc.contributor.author | Lin, Chia-Pin | en_US |
| dc.date.accessioned | 2014-12-16T06:16:11Z | |
| dc.date.available | 2014-12-16T06:16:11Z | |
| dc.date.issued | 2006-11-16 | en_US |
| dc.description.abstract | The present invention proposes a nano-scale high-performance SOI MOSFET device and a process for manufacturing the same. The device is characterized by comprising: a metal oxide semiconductor, formed on the SOI substrate; a silicide layer (05), wherein a gate consists of a single full silicide gate (10), a high-K dielectric layer (08) and a part for work function modification (09); and source/drain (6) are complete through a silicide reaction and has a modified Schottky junction. | zh_TW |
| dc.identifier.govdoc | H01L021/8238 | zh_TW |
| dc.identifier.govdoc | H01L027/12 | zh_TW |
| dc.identifier.govdoc | H01L029/76 | zh_TW |
| dc.identifier.govdoc | H01L029/94 | zh_TW |
| dc.identifier.govdoc | H01L021/44 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105689 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Fully-depleted SOI MOSFET device and process for fabricating the same | zh_TW |
| dc.type | Patents | en_US |