Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge
| dc.contributor.author | Chen, Yi-Ju | en_US |
| dc.contributor.author | Tsui, Bing-Yue | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2018-08-21T05:57:09Z | |
| dc.date.available | 2018-08-21T05:57:09Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | Effects of vanadium incorporation on the electron Schottky barrier height reduction of NiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment. | en_US |
| dc.identifier.journal | 2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/147108 | |
| dc.identifier.wosnumber | WOS:000426985900156 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Germanium | en_US |
| dc.subject | Schottky barrier height | en_US |
| dc.subject | vanadium | en_US |
| dc.title | Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge | en_US |
| dc.type | Proceedings Paper | en_US |
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