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Electrical characterization of fine-pitch compliant bumps

dc.citation.epage612en_US
dc.citation.spage608en_US
dc.contributor.authorLin, C. K.en_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorChang, Shyh-Mingen_US
dc.contributor.authorAn, Chao-Chyunen_US
dc.contributor.authorLee, Hsiao Tingen_US
dc.contributor.authorKao, Kuo-Shuen_US
dc.contributor.authorTsang, Jimmyen_US
dc.contributor.authorYang, Sheng-Shuen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:01:52Z
dc.date.available2014-12-08T15:01:52Z
dc.date.issued2008en_US
dc.description.abstractThe electrical characterization of fine-pitch compliant Au bumps is investigated in this study. Compliant Au bumps of 20 microns pitch were fabricated on a glass substrate for chip-on-glass application. Kelvin probes are fabricated and employed to measure the bump resistance. The resistance ranges from 1.0 to 4.5 ohms, depending on process parameters. Current-carrying capability for these bumps is examined. Electromigration test is performed and it is found that the failure occurs in the wiring Al line on the glass substrate, indicating that the Au bumps have high electromigration resistance. The bump resistance is also measured during thermal cycling from 30 to 110 degrees C, and the resistance increases less than 50% after 6 cycles. Aging test is also carried out at 60 degrees C and 40 mA, and the failure time is 561 hours.en_US
dc.identifier.isbn978-1-4244-2117-6en_US
dc.identifier.journalEPTC: 2008 10TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1-3en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/619
dc.identifier.wosnumberWOS:000265818600097
dc.language.isoen_USen_US
dc.titleElectrical characterization of fine-pitch compliant bumpsen_US
dc.typeProceedings Paperen_US

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