Schottky structure in GaAs semiconductor device
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 06787910 | zh_TW |
| dc.contributor.author | Lee | en_US |
| dc.contributor.author | Cheng-Shih | en_US |
| dc.contributor.author | Chang | en_US |
| dc.contributor.author | Yi | en_US |
| dc.date.accessioned | 2014-12-16T06:14:40Z | |
| dc.date.available | 2014-12-16T06:14:40Z | |
| dc.date.issued | 2004-09-07 | en_US |
| dc.description.abstract | The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer. | zh_TW |
| dc.identifier.govdoc | H01L023/48 | zh_TW |
| dc.identifier.govdoc | H01L023/52 | zh_TW |
| dc.identifier.govdoc | H01L029/47 | zh_TW |
| dc.identifier.govdoc | H01L029/40 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104841 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Schottky structure in GaAs semiconductor device | zh_TW |
| dc.type | Patents | en_US |