High Photoresponsivity Germanium Nanodot PhotoMOSFETs for Monolithically-Integrated Si Optical Interconnects

dc.citation.epage	190	en_US
dc.citation.spage	189	en_US
dc.contributor.author	Kuo, Ming-Hao	en_US
dc.contributor.author	Lee, Morris M.	en_US
dc.contributor.author	Li, Pei-Wen	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.date.accessioned	2018-08-21T05:56:52Z
dc.date.available	2018-08-21T05:56:52Z
dc.date.issued	2017-01-01	en_US
dc.description.abstract	We presented a self-organized, MOS gate-stacking structure of SiO2/Ge-dot/SiO2/Si1-xGex-shell, using thermal oxidation of poly-Si0.85Ge0.15 nanopillars over buffer Si3N4 on the Si substrate, for the fabrication of high performance Ge-dot photoMOSFETs. Low dark current of 3 mu A/.m(2), Superior high photoresponsivity of 1400. 710A/W, and short response time of <0.8ns are measured on 90nm Ge-dot photoMOSFETs with W/L = 70 mu m/3 mu m under 850nm-1550nm illumination, providing a practically-achievable, core building block for monolithically-integrated Si optical interconnects.	en_US
dc.identifier.journal	2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/146768
dc.identifier.wosnumber	WOS:000409022100079	en_US
dc.language.iso	en_US	en_US
dc.subject	Ge-dot	en_US
dc.subject	phototransistor	en_US
dc.subject	and optical interconnects	en_US
dc.title	High Photoresponsivity Germanium Nanodot PhotoMOSFETs for Monolithically-Integrated Si Optical Interconnects	en_US
dc.type	Proceedings Paper	en_US

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