Correlated Electric Fluctuations in GaN Nanowire Devices
| dc.citation.epage | 1003 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 1000 | en_US |
| dc.citation.volume | 9 | en_US |
| dc.contributor.author | Li, L. C. | en_US |
| dc.contributor.author | Huang, S. Y. | en_US |
| dc.contributor.author | Wei, J. A. | en_US |
| dc.contributor.author | Suen, Y. W. | en_US |
| dc.contributor.author | Lee, M. W. | en_US |
| dc.contributor.author | Hsieh, W. H. | en_US |
| dc.contributor.author | Liu, T. W. | en_US |
| dc.contributor.author | Chen, C. C. | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2014-12-08T15:17:32Z | |
| dc.date.available | 2014-12-08T15:17:32Z | |
| dc.date.issued | 2009-02-01 | en_US |
| dc.description.abstract | We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area. | en_US |
| dc.identifier.doi | 10.1166/jnn.2009.C072 | en_US |
| dc.identifier.issn | 1533-4880 | en_US |
| dc.identifier.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1166/jnn.2009.C072 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12712 | |
| dc.identifier.wosnumber | WOS:000263653300072 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Noise | en_US |
| dc.subject | Low-Frequency Excess Noise | en_US |
| dc.subject | GaN Nanowire | en_US |
| dc.subject | Electric Fluctuation | en_US |
| dc.subject | Correlation | en_US |
| dc.subject | Cross Spectrum | en_US |
| dc.title | Correlated Electric Fluctuations in GaN Nanowire Devices | en_US |
| dc.type | Article; Proceedings Paper | en_US |
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