場效應電晶體負電阻理論之商榷
| dc.citation.epage | 266 | en_US |
| dc.citation.spage | 263 | en_US |
| dc.citation.volume | 2 | en_US |
| dc.contributor.author | 莊晴光 | zh_TW |
| dc.contributor.author | 蔡中 | zh_TW |
| dc.contributor.author | Ching-Kuang Tzuan | en_US |
| dc.contributor.author | Chun Tsai | en_US |
| dc.date.accessioned | 2017-10-06T06:22:48Z | |
| dc.date.available | 2017-10-06T06:22:48Z | |
| dc.date.issued | 1976-12 | en_US |
| dc.description.abstract | A theory of negative differential resistance proposed originally for JFET is extended and discussed for the results for MISFET devices to determine both peak point and valley point in the I-V curves. | en_US |
| dc.identifier.journal | 交通大學學報 | zh_TW |
| dc.identifier.journal | The Journal of National Chiao Tung University | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137585 | |
| dc.language.iso | en_US | en_US |
| dc.title | 場效應電晶體負電阻理論之商榷 | zh_TW |
| dc.title | Comments on the Theory of Negative Resistance of FET Devices | en_US |
| dc.type | Campus Publications | en_US |