Investigation on seal-ring rules for IC product reliability in 0.25-mu m CMOS technology
| dc.citation.epage | 1316 | en_US |
| dc.citation.issue | 9-11 | en_US |
| dc.citation.spage | 1311 | en_US |
| dc.citation.volume | 45 | en_US |
| dc.contributor.author | Chen, SH | en_US |
| dc.contributor.author | Ker, MD | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:18:35Z | |
| dc.date.available | 2014-12-08T15:18:35Z | |
| dc.date.issued | 2005-09-01 | en_US |
| dc.description.abstract | The distance between active region and the seal-ring location has been investigated in a 0.25 mu m CMOS process. From the experimental results, this distance can be shrunk to only 5 pm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT). (c) 2005 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.microrel.2005.07.012 | en_US |
| dc.identifier.issn | 0026-2714 | en_US |
| dc.identifier.journal | MICROELECTRONICS RELIABILITY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.microrel.2005.07.012 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13376 | |
| dc.identifier.wosnumber | WOS:000232253500007 | |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation on seal-ring rules for IC product reliability in 0.25-mu m CMOS technology | en_US |
| dc.type | Article; Proceedings Paper | en_US |