新穎三五族通道與源極/汲極結構之研發與其應用於次14奈米互補式金氧半場效電晶體之製作
| dc.contributor.author | 簡昭欣 | zh_TW |
| dc.contributor.author | Chien Chao-Hsin | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2016-03-28T08:17:19Z | |
| dc.date.available | 2016-03-28T08:17:19Z | |
| dc.date.issued | 2015 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.identifier.govdoc | MOST104-2221-E009-060-MY3 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=11565409&docId=467017 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/129873 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 新穎三五族通道與源極/汲極結構之研發與其應用於次14奈米互補式金氧半場效電晶體之製作 | zh_TW |
| dc.title | Development of Advanced Source/Drain Structure and Its Application on Sub-14nm III-V Channel Complementary Metal-Oxide-Semiconductor Field Effect Transistors | en_US |
| dc.type | Plan | en_US |
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