Spin-orbit interaction and all-semiconductor spintronics

dc.citation.epage363en_US
dc.citation.issue2en_US
dc.citation.spage361en_US
dc.citation.volume16en_US
dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorLee, CPen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:41:09Z
dc.date.available2014-12-08T15:41:09Z
dc.date.issued2003-04-01en_US
dc.description.abstractThe purpose of this paper is to give a brief review and trace the present-day perspectives to exploit the spin-orbit interaction in conventional nonmagnetic semiconductor nanostructures. We demonstrate theoretically that the structures can be used to design basic elements of highspeed spintronic devices. In particular we discuss spin filtering, spin-dependent confinement, and scattering in all-semiconductor nanostructures.en_US
dc.identifier.issn0896-1107en_US
dc.identifier.journalJOURNAL OF SUPERCONDUCTIVITYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/28008
dc.identifier.wosnumberWOS:000182711100030
dc.language.isoen_USen_US
dc.subjectspin-orbit interactionen_US
dc.subjectspintronicsen_US
dc.subjectnanoscale structuresen_US
dc.titleSpin-orbit interaction and all-semiconductor spintronicsen_US
dc.typeArticle; Proceedings Paperen_US

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