III-V metal-oxide-semiconductor device
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 08519488 | zh_TW |
| dc.contributor.author | Chang Edward Yi | en_US |
| dc.contributor.author | Lin Yueh-Chin | en_US |
| dc.date.accessioned | 2014-12-16T06:13:59Z | |
| dc.date.available | 2014-12-16T06:13:59Z | |
| dc.date.issued | 2013-08-27 | en_US |
| dc.description.abstract | A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer. | zh_TW |
| dc.identifier.govdoc | H01L021/02 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104450 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | III-V metal-oxide-semiconductor device | zh_TW |
| dc.type | Patents | en_US |